| Автор | D W F James |
| Автор | C Lewis |
| Дата выпуска | 1965-08-01 |
| dc.description | A study has been made of the growth of single crystal silicon by the recently proposed vapour-liquid-solid mechanism. The reduction of silicon tetrachloride with hydrogen has been used to deposit silicon via thin liquid alloy zones of gold/silicon and nickel/silicon on to single crystal substrates.Epitaxial layers and orientated whiskers are obtained using gold, while the growth from nickel appears random. Various growth forms are explained in terms of the temperature variation of the surface tension of the liquid alloy. The work emphasizes the value of the vapour-liquid-solid mechanism and has shown the importance of temperature and temperature gradients in its control. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Silicon whisker growth and epitaxy by the vapour-liquid-solid mechanism |
| Тип | paper |
| DOI | 10.1088/0508-3443/16/8/305 |
| Print ISSN | 0508-3443 |
| Журнал | British Journal of Applied Physics |
| Том | 16 |
| Первая страница | 1089 |
| Последняя страница | 1094 |
| Аффилиация | D W F James; Department of Materials Science, University College of North Wales, Bangor |
| Аффилиация | C Lewis; Department of Materials Science, University College of North Wales, Bangor |
| Выпуск | 8 |
