The electrical properties of some HgTe - In<sub>2</sub>Te<sub>3</sub> alloys
J E Lewis; D A Wright; J E Lewis; Department of Applied Physics, University of Durham; D A Wright; Department of Applied Physics, University of Durham
Журнал:
British Journal of Applied Physics
Дата:
1966-06-01
Аннотация:
The electrical conductivity, Hall effect and Seebeck coefficient have been measured for single crystals of alloys of HgTe with In<sub>2</sub>Te<sub>3</sub> from zero to 37·5% molecular In<sub>2</sub>Te<sub>3</sub>. Preliminary measurements have been made also in the range 37·5-50%. Electron mobilities near 10 000 cm<sup>2</sup> V<sup>-1</sup> sec<sup>-1</sup> at 300°K are observed in the 0-37·5% range. The effective mass m<sub>e</sub> in this range does not vary much with composition, and is near 0·04 m<sub>0</sub> at 300°K when the electron density is about 3 × 10<sup>17</sup> cm<sup>-3</sup> at that temperature. m<sub>e</sub> rises with temperature and with carrier density in the alloys.
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