| Автор | J E Lawrence |
| Дата выпуска | 1967-04-01 |
| dc.description | The dominant mechanisms governing the anomalous diffusion of group III (B and Ga) and group V (P and Sb) elements in plastically deformed silicon have been investigated. The generation of vacancies by moving dislocations leads to the enhanced diffusion of B, Ga, and Sb in a lattice undergoing dynamic plastic deformation. A direct relationship appears to exist between the size of the solutes and the solutes' sensitivities to this enhanced diffusion mechanism. The presence of a great density of static dislocations does not measurably influence the diffusion of B, Ga or Sb. The diffusion of phosphorus into a crystal undergoing dynamic plastic deformation results in a `retarded' penetration of the diffused region relative to diffusion in a disorder-free lattice. This `retarded' diffusion effect is attributed to phosphorus precipitation. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Solute diffusion in plastically deformed silicon crystals |
| Тип | paper |
| DOI | 10.1088/0508-3443/18/4/303 |
| Print ISSN | 0508-3443 |
| Журнал | British Journal of Applied Physics |
| Том | 18 |
| Первая страница | 405 |
| Последняя страница | 547-2 |
| Аффилиация | J E Lawrence; Fairchild Semiconductor Division, Fairchild Camera and Instrument Corporation, Palo Alto, California, U.S.A. |
| Выпуск | 4 |
