| Автор | B K Ridley |
| Автор | P H Wisbey |
| Дата выпуска | 1967-06-01 |
| dc.description | The one-dimensional propagation of stable negative-resistance domains is considered for the case in which the carriers interact with a single type of impurity level. Approximate expressions for the domain velocity and the current in the presence of a domain are obtained for the following cases:(i) Fast trapping - traps in equilibrium with the conduction band at all points in the domain.(ii) Slow trapping:(a) Zero trapping - domain moves too quickly for traps to respond.(b) Delayed trapping (I) - the high-field plateau is wide enough for traps to respond.(c) Delayed trapping (II) - traps in equilibrium with conduction band only above a critical field E<sub>c</sub>.(c) is the case which most closely corresponds to the observed impurity-barrier negative resistance in Ge. The analysis is also relevant to the explanation of slow domains in n-type GaAs. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Non-linear theory of electrical domains in the presence of trapping |
| Тип | paper |
| DOI | 10.1088/0508-3443/18/6/309 |
| Print ISSN | 0508-3443 |
| Журнал | British Journal of Applied Physics |
| Том | 18 |
| Первая страница | 761 |
| Последняя страница | 771 |
| Аффилиация | B K Ridley; Physics Department, University of Essex, Colchester |
| Аффилиация | P H Wisbey; Physics Department, University of Essex, Colchester |
| Выпуск | 6 |
