ArF laser-induced emission from high-T<sub>c</sub> superconducting (123) thin films deposited by ArF laser ablation
S Deshmukh; E W Rothe; G P Reck; T Kushida; Zai Gui Xu; S Deshmukh; Dept. of Chem. Eng., Wayne State Univ., Detroit, MI, USA; E W Rothe; Dept. of Chem. Eng., Wayne State Univ., Detroit, MI, USA; G P Reck; Dept. of Chem. Eng., Wayne State Univ., Detroit, MI, USA; T Kushida; Dept. of Chem. Eng., Wayne State Univ., Detroit, MI, USA; Zai Gui Xu; Dept. of Chem. Eng., Wayne State Univ., Detroit, MI, USA
Журнал:
Superconductor Science and Technology
Дата:
1989-04-01
Аннотация:
A 193 nm excimer laser is used to deposit thin films of Y-Ba-Cu-O on sapphire. These films are subsequently annealed to be high-T<sub>c</sub> superconducting. Spectral analysis of a 193 nm laser-induced plume from bulk, non-superconducting and superconducting films of Y-Ba-Cu-O as well as from BaO, CuO and Y<sub>2</sub>O<sub>3</sub> leads to the conclusion that the emissions are from simple atomic and diatomic species. The observations add weight to a recent suggestion that in situ observation of the emission spectra from the laser-induced plumes might be used as a monitor of film properties. A subtle difference between the emissions from bulk, annealed and unannealed films is observed.
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