Автор | M Pissas |
Автор | B Billon |
Автор | M Charalambous |
Автор | J Chaussy |
Автор | S LeFloch |
Автор | P Bordet |
Автор | J J Capponi |
Дата выпуска | 1997-08-01 |
dc.description | Single crystals of of typical size were grown inside a sealed silica tube with and without excess of precursor . The process is reproducible for high growth temperatures at which the use of an alumina crucible is necessary. For lower growth temperatures the as-prepared crystals are underdoped with . An optimal is achieved by post-annealing the crystals in flowing oxygen at . Crystals grown at higher temperatures show an increase of the c-axis length after oxygen annealing, indicating they are overdoped. |
Формат | application.pdf |
Издатель | Institute of Physics Publishing |
Название | Single-crystal growth and characterization of the superconductor |
Тип | paper |
DOI | 10.1088/0953-2048/10/8/013 |
Electronic ISSN | 1361-6668 |
Print ISSN | 0953-2048 |
Журнал | Superconductor Science and Technology |
Том | 10 |
Первая страница | 598 |
Последняя страница | 604 |
Выпуск | 8 |