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Автор M Pissas
Автор B Billon
Автор M Charalambous
Автор J Chaussy
Автор S LeFloch
Автор P Bordet
Автор J J Capponi
Дата выпуска 1997-08-01
dc.description Single crystals of of typical size were grown inside a sealed silica tube with and without excess of precursor . The process is reproducible for high growth temperatures at which the use of an alumina crucible is necessary. For lower growth temperatures the as-prepared crystals are underdoped with . An optimal is achieved by post-annealing the crystals in flowing oxygen at . Crystals grown at higher temperatures show an increase of the c-axis length after oxygen annealing, indicating they are overdoped.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Single-crystal growth and characterization of the superconductor
Тип paper
DOI 10.1088/0953-2048/10/8/013
Electronic ISSN 1361-6668
Print ISSN 0953-2048
Журнал Superconductor Science and Technology
Том 10
Первая страница 598
Последняя страница 604
Выпуск 8

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