HTSC devices fabricated by selective epitaxial growth
S K H Lam; B Sankrithyan
Журнал:
Superconductor Science and Technology
Дата:
1999-04-01
Аннотация:
The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique.
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