Scaling behaviour of rf surface resistance in oxygen deficient single-domain YBCO
D Qu; Donglu Shi; Altan Ferendeci; David Mast; H A Blackstead; I Maartense
Журнал:
Superconductor Science and Technology
Дата:
2000-06-01
Аннотация:
To develop high-quality rf components for wireless telecommunications, we have processed single-domain YBCO of various dimensions and geometry for the device applications including high-Q resonators and filters. In this development, a critical parameter, the surface resistance, R<sub>s</sub>, of single-domain YBCO has been measured in wide ranges of temperature and magnetic field. We have found that the Pippard model can best describe the well oxygenated crystal, indicating the high-quality of single-domain YBCO. However, such scaling breaks down when the oxygen structural disorders are introduced into the sample. A fundamentally different scaling behaviour is observed, which is closely related to the structural defects of oxygen. We report such a behaviour and discuss the possible underlying mechanism.
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