| Автор | V G Bessergenev |
| Автор | N V Gelfond |
| Автор | I K Igumenov |
| Автор | S Sh Ilyasov |
| Автор | R D Kangiev |
| Автор | Yu A Kovalevskaya |
| Автор | V S Kravchenko |
| Автор | S A Slobodyan |
| Автор | V I Motorin |
| Автор | A F Shestak |
| Дата выпуска | 1991-07-01 |
| dc.description | The technology of fabrication and the properties of metallic electrical contacts on ceramics of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> superconductors have been studied. Contacts were deposited using the method of metal-organic chemical vapour deposition (MOCVD) for Ir, Pd and the method of exploding wires for W, Mo, Ni. The contacts, prepared by evaporation of Ir in oxygen atmosphere, have specific contact resistance rho <sub>c</sub> of about 10<sup>-5</sup> Omega cm<sup>2</sup>. Since the temperature of deposition of contacts is 300-400 degrees C (i.e. lower than 500 degrees C, the temperature at which chemical interaction on the YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub>-Si, SiC, SiO<sub>2</sub> boundary starts), such a technique can be incorporated into silicon-compatible technologies. It has been shown that good adhesion and specific contact resistivities of approximately 10<sup>-2</sup> Omega cm<sup>2</sup> for W and Ni and approximately 10<sup>-3</sup> Omega cm<sup>2</sup> for Mo can be achieved. After subsequent annealing rho <sub>c</sub> reaches 10<sup>-6</sup>, 7*10<sup>-5</sup>, 7*10<sup>-3</sup> and 10<sup>-2</sup> Omega cm<sup>2</sup> for Ir, Ni, W and Mo, respectively. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Technology of fabrication and electrical characteristics of W, Mo, Ni and Ir, Pd contacts with YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> |
| Тип | paper |
| DOI | 10.1088/0953-2048/4/7/001 |
| Electronic ISSN | 1361-6668 |
| Print ISSN | 0953-2048 |
| Журнал | Superconductor Science and Technology |
| Том | 4 |
| Первая страница | 273 |
| Последняя страница | 278 |
| Аффилиация | V G Bessergenev; Inst. of Inorganic Chem., Acad. of Sci., Novosibirsk, USSR |
| Аффилиация | N V Gelfond; Inst. of Inorganic Chem., Acad. of Sci., Novosibirsk, USSR |
| Аффилиация | I K Igumenov; Inst. of Inorganic Chem., Acad. of Sci., Novosibirsk, USSR |
| Аффилиация | S Sh Ilyasov; Inst. of Inorganic Chem., Acad. of Sci., Novosibirsk, USSR |
| Аффилиация | R D Kangiev; Inst. of Inorganic Chem., Acad. of Sci., Novosibirsk, USSR |
| Аффилиация | Yu A Kovalevskaya; Inst. of Inorganic Chem., Acad. of Sci., Novosibirsk, USSR |
| Аффилиация | V S Kravchenko; Inst. of Inorganic Chem., Acad. of Sci., Novosibirsk, USSR |
| Аффилиация | S A Slobodyan; Inst. of Inorganic Chem., Acad. of Sci., Novosibirsk, USSR |
| Аффилиация | V I Motorin; Inst. of Inorganic Chem., Acad. of Sci., Novosibirsk, USSR |
| Аффилиация | A F Shestak; Inst. of Inorganic Chem., Acad. of Sci., Novosibirsk, USSR |
| Выпуск | 7 |
