Fabrication and properties of superconducting double-barrier structures
G E Babayan; L V Filippenko; G A Ovsyannikov; O B Uvarov; V P Koshelets; G E Babayan; Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, USSR; L V Filippenko; Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, USSR; G A Ovsyannikov; Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, USSR; O B Uvarov; Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, USSR; V P Koshelets; Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, USSR
Журнал:
Superconductor Science and Technology
Дата:
1991-09-01
Аннотация:
An earlier developed method for fabrication of an Nb tunnel junction with an AlO<sub>x</sub> interlayer has been used for preparing several types of superconducting double-barrier structures: Nb/Al/Nb, Nb/Nb'/Nb and Nb/Nb'/Al (/ indicates an AlO<sub>x</sub> tunnel barrier), the Al and Nb' interlayer thickness is 5-20 nm. High resolution TEM analysis shows that the interface between the metal and tunnelling layer is atom sharp and that the barrier film is amorphous. The I-V curves of the structures have been measured.
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