| Автор | G S Okram |
| Автор | Om Prakash |
| Автор | B D Padalia |
| Автор | D Chandrasekharam |
| Автор | A S Tamhanell |
| Автор | L C Gupta |
| Дата выпуска | 1992-09-01 |
| dc.description | The oxygen vacancy parameter, delta , in electron-doped superconducting Nd<sub>1.85</sub>Ce<sub>0.15</sub>CuO<sub>4- delta </sub>, has been varied by changing the sample-processing conditions. A T<sub>c</sub>-onset value of 19 K was obtained by quenching alone. T<sub>c</sub> onset as high as 24 K, T<sub>c</sub>(R=0)=17 K and Delta T(90%-10%)=3 K have been achieved for delta =0.05 in argon-annealed single-phase Nd<sub>1.85</sub>Ce<sub>0.15</sub>CuO<sub>4- delta </sub> samples. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Effect of oxygen stoichiometry variation on T<sub>c</sub> in Nd<sub>1.85</sub>Ce<sub>0.15</sub>CuO<sub>4- delta </sub> |
| Тип | paper |
| DOI | 10.1088/0953-2048/5/9/007 |
| Electronic ISSN | 1361-6668 |
| Print ISSN | 0953-2048 |
| Журнал | Superconductor Science and Technology |
| Том | 5 |
| Первая страница | 561 |
| Последняя страница | 563 |
| Аффилиация | G S Okram; Indian Inst. of Technol., Bombay, India |
| Аффилиация | Om Prakash; Indian Inst. of Technol., Bombay, India |
| Аффилиация | B D Padalia; Indian Inst. of Technol., Bombay, India |
| Аффилиация | D Chandrasekharam; Indian Inst. of Technol., Bombay, India |
| Аффилиация | A S Tamhanell; Indian Inst. of Technol., Bombay, India |
| Аффилиация | L C Gupta; Indian Inst. of Technol., Bombay, India |
| Выпуск | 9 |
