Ultra-high-Q resonators for low-noise, microwave signal generation using sapphire buffer layers and superconducting thin films
F Abbas; L E Davis; J C Gallop; F Abbas; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK; L E Davis; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK; J C Gallop; Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Журнал:
Superconductor Science and Technology
Дата:
1994-07-01
Аннотация:
An analysis has been completed to provide guidelines for producing planar microwave resonators with Q-factors of the order of 10<sup>6</sup>-10<sup>8</sup> at a temperature of 4 K and a frequency of 1-20 GHz using high-T<sub>c</sub> superconducting thin films on sapphire shielded by suitable buffer layers. Buffer layers not only overcome the problems of film-substrate interactions and reduction of microcracks, but can also confine the field into the sapphire which enhances the Q<sub>r</sub> and Q<sub>c</sub> of the resonator.
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