Superconducting FET circuits for analogue VLSI signal processing
J F Jiang; Q Y Cai; H M Jiang; Y S Tang; Z L Zhong; J F Jiang; Microelectronics Centre, Shanghai Jiao Tong University, Shanghai, 200030, People's Republic of China; Q Y Cai; Microelectronics Centre, Shanghai Jiao Tong University, Shanghai, 200030, People's Republic of China; H M Jiang; Microelectronics Centre, Shanghai Jiao Tong University, Shanghai, 200030, People's Republic of China; Y S Tang; Microelectronics Centre, Shanghai Jiao Tong University, Shanghai, 200030, People's Republic of China; Z L Zhong; Microelectronics Centre, Shanghai Jiao Tong University, Shanghai, 200030, People's Republic of China
Журнал:
Superconductor Science and Technology
Дата:
1996-04-01
Аннотация:
CMOSuFET (complementary metal - oxide - superconductor field-effect transistor) discrete-time current-mode (DM) and continuous-time current-mode (CM) circuits for an analogue VLSI (very-large-scale-integrated) signal processing system are described. A family of modules - a simple sampled-data current memory circuit, a current delay circuit, a current integrator, a continuous-time current mirror, and an amplifier - are presented. Their main advantage lies in the very high frequency response, and very low power dissipation. The circuits have extensive development potential for high-performance analogue VLSI signal processing systems.
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