| Автор | Tatsushi Akazaki |
| Автор | Junsaku Nitta |
| Автор | Hideaki Takayanagi |
| Автор | Takatomo Enoki |
| Дата выпуска | 1996-04-01 |
| dc.description | A newly fabricated Josephson field effect transistor (JOFET) is coupled with a two-dimensional electron gas (2DEG) in a strained InAs quantum well inserted into an inverted modulation-doped structure with an HEMT-type gate. We indicate the improved characteristics of the JOFET with the HEMT-type gate, instead of the MIS-type gate. The superconducting critical current as well as the junction's normal resistance can be completely controlled via a gate voltage of about -1 V; this provides voltage gain over unity, the first time for a JOFET. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Superconducting transistors using InAs-inserted-channel InAlAs/InGaAs inverted HEMTs |
| Тип | paper |
| DOI | 10.1088/0953-2048/9/4A/022 |
| Electronic ISSN | 1361-6668 |
| Print ISSN | 0953-2048 |
| Журнал | Superconductor Science and Technology |
| Том | 9 |
| Первая страница | A83 |
| Последняя страница | A86 |
| Выпуск | 4A |
