Heterostructures with a thin or ferroelectric layer between two superconducting films were laser deposited on a buffered Si-on-sapphire substrate. The top and bottom films were well c-axis oriented and free from micro-cracks and had superconducting transitions in the range 88 - 90 K. The dielectric permittivity, , and the high-frequency losses of epitaxially grown and layers were measured in the temperature interval 15 - 300 K (f = 100 kHz).