Analysis of the proximity function in electron-beam lithography on high- superconducting thin-films
Y M Gueorguiev; K G Vutova; G M Mladenov; Y M Gueorguiev; Laboratory of Physical Problems of Electron-Beam Technologies, Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shose 72, 1784 Sofia, Bulgaria; K G Vutova; Laboratory of Physical Problems of Electron-Beam Technologies, Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shose 72, 1784 Sofia, Bulgaria; G M Mladenov; Laboratory of Physical Problems of Electron-Beam Technologies, Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shose 72, 1784 Sofia, Bulgaria
Журнал:
Superconductor Science and Technology
Дата:
1996-07-01
Аннотация:
In this paper we approximate by the combination of double Gaussian and exponential functions the radial distributions of the absorbed electron energy density in a 125 nm PMMA resist layer on thin-film/substrate targets obtained by means of Monte Carlo simulation for a zero-width -function and the following variables (i) the substrate material ( and MgO), (ii) the electron beam energy (25, 50 and 75 keV) and (iii) the film thickness d (0, 100, 200 and 300 nm). The values of the parameters of the analytical function are calculated using an original Monte Carlo technique. These values are presented in the form of 3D diagrams which show their dependences on beam energy and on high-temperature superconducting film thickness and can also be used for approximate determination of the parameters at different initial conditions.
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