| Автор | M Liu |
| Автор | D Y Xing |
| Автор | C S Ting |
| Дата выпуска | 1989-01-16 |
| dc.description | The method of nonequilibrium statistical operators developed by Zubarev (1974) has been extended to study transient hot-electron transport in many-valley semiconductors. A set of coupled evolution equations with memory effect are derived to determine the time-dependent drift velocities upsilon <sub>alpha </sub>(t), hot-electron temperatures T<sub>alpha </sub>(t) and populations N<sub>alpha </sub>(t) of various valleys under time-dependent electric fields. In the classical approximation these nonlinear differential equations are applied to study the transient transport of GaAs with a Gamma -L-X band structure under electric fields with several configurations: (i) time-step; (ii) rectangular time pulse; (iii) high-frequency sinusoid. Using the same set of parameters, the authors' calculated results for upsilon <sub>d</sub>(t)= Sigma <sub>alpha </sub>N<sub>alpha </sub>(t) upsilon <sub>alpha </sub>(t)/ Sigma <sub>alpha </sub>N<sub>alpha </sub>(t) compare quantitatively with those in Monte Carlo calculations. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Transient hot-electron transport in GaAs with a Γ-L-X band structure |
| Тип | paper |
| DOI | 10.1088/0953-8984/1/2/009 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | 407 |
| Последняя страница | 418 |
| Аффилиация | M Liu; Dept. of Phys., Houston Univ., TX, USA |
| Аффилиация | D Y Xing; Dept. of Phys., Houston Univ., TX, USA |
| Аффилиация | C S Ting; Dept. of Phys., Houston Univ., TX, USA |
| Выпуск | 2 |
