The density of states and dielectric constant of monolayer superlattice Ga<sub>0.47</sub>In<sub>0.53</sub>As/InP(110)
Zhizhong Xu; Zhizhong Xu; Dept. of Phys., Fudan Univ., Shanghai, China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-06-05
Аннотация:
The DOS, JDOS and epsilon <sub>2</sub>( Omega ) of monolayer superlattice Ga<sub>0.47</sub>In<sub>0.53</sub>As/InP(110) have been calculated using the tight-binding approach and compared with those of alloy Ga<sub>0.235</sub>In<sub>0.765</sub>P<sub>0.5</sub>As<sub>0.5</sub>, which has the same stoichiometric composition as the monolayer superlattice. The effects of the superlattice periodicity on the electronic structure and optical properties of materials are discussed. The roles played by momentum matrix elements in the superlattices and alloys are pointed out.
229.0Кб