Resonant tunnelling studies of magnetoelectric quantisation in wide quantum wells
M L Leadbeater; E S Alves; L Eaves; M Henini; O H Hughes; A Celeste; J C Portal; G Hill; M A Pate; M L Leadbeater; Dept. of Phys., Nottingham Univ., UK; E S Alves; Dept. of Phys., Nottingham Univ., UK; L Eaves; Dept. of Phys., Nottingham Univ., UK; M Henini; Dept. of Phys., Nottingham Univ., UK; O H Hughes; Dept. of Phys., Nottingham Univ., UK; A Celeste; Dept. of Phys., Nottingham Univ., UK; J C Portal; Dept. of Phys., Nottingham Univ., UK; G Hill; Dept. of Phys., Nottingham Univ., UK; M A Pate; Dept. of Phys., Nottingham Univ., UK
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-07-24
Аннотация:
Resonant tunnelling in n-type GaAs-(AlGa)As double-barrier heterostructures with wide quantum wells is investigated as a function of magnetic field applied in the plane of the tunnel barriers. The evolution of the resonances in the current-voltage characteristics with magnetic field is used to study the transition from electric to magnetic confinement of electrons in the quantum well.
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