Автор |
He Xiaoguang |
Автор |
Huang Meichun |
Дата выпуска |
1989-08-14 |
dc.description |
The spin-polarised band structure, density of states (DOS), magnetic moments and exchange interaction coefficients for a layer structure Zn<sub>0.5</sub>Mn<sub>0.5</sub>Se in the ferromagnetic phase have been calculated using the self-consistent linear muffin-tin orbital atomic sphere approximation method. Its band structure and DOS distribution are explained through a p-d repulsion model. The band structure in the antiferromagnetic phase is also analysed qualitatively in terms of the p-d repulsion mechanism. The results of the present work show that the bands are strongly polarised. In the case of spin up, the bands are direct, with a band gap of 0.68 eV and a filled Mn 3d valence band whereas, for the spin-down case, the bands are indirect, with a band gap of 1.81 eV and an empty Mn 3d conduction band. These results are in agreement with Hund's rule. The calculated total magnetic moment is 4.81 mu <sub>B</sub>/cell; the p-d and s-d exchange interaction coefficients are -1.10 eV and 0.04 eV, respectively. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Spin-polarised band structure for the semimagnetic semiconductor Zn<sub>0.5</sub>Mn<sub>0.5</sub>Se |
Тип |
paper |
DOI |
10.1088/0953-8984/1/32/006 |
Electronic ISSN |
1361-648X |
Print ISSN |
0953-8984 |
Журнал |
Journal of Physics: Condensed Matter |
Том |
1 |
Первая страница |
5371 |
Последняя страница |
5380 |
Аффилиация |
He Xiaoguang; Dept. of Phys., Xiamen Univ., China |
Аффилиация |
Huang Meichun; Dept. of Phys., Xiamen Univ., China |
Выпуск |
32 |