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Автор He Xiaoguang
Автор Huang Meichun
Дата выпуска 1989-08-14
dc.description The spin-polarised band structure, density of states (DOS), magnetic moments and exchange interaction coefficients for a layer structure Zn<sub>0.5</sub>Mn<sub>0.5</sub>Se in the ferromagnetic phase have been calculated using the self-consistent linear muffin-tin orbital atomic sphere approximation method. Its band structure and DOS distribution are explained through a p-d repulsion model. The band structure in the antiferromagnetic phase is also analysed qualitatively in terms of the p-d repulsion mechanism. The results of the present work show that the bands are strongly polarised. In the case of spin up, the bands are direct, with a band gap of 0.68 eV and a filled Mn 3d valence band whereas, for the spin-down case, the bands are indirect, with a band gap of 1.81 eV and an empty Mn 3d conduction band. These results are in agreement with Hund's rule. The calculated total magnetic moment is 4.81 mu <sub>B</sub>/cell; the p-d and s-d exchange interaction coefficients are -1.10 eV and 0.04 eV, respectively.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Spin-polarised band structure for the semimagnetic semiconductor Zn<sub>0.5</sub>Mn<sub>0.5</sub>Se
Тип paper
DOI 10.1088/0953-8984/1/32/006
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 1
Первая страница 5371
Последняя страница 5380
Аффилиация He Xiaoguang; Dept. of Phys., Xiamen Univ., China
Аффилиация Huang Meichun; Dept. of Phys., Xiamen Univ., China
Выпуск 32

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