A theoretical study of resonant tunnelling in the double-barrier structure
Jian-ping Peng; Hao Chen; Shi-xun Zhou; Jian-ping Peng; Dept. of Phys., Fudan Univ., Shanghai, China; Hao Chen; Dept. of Phys., Fudan Univ., Shanghai, China; Shi-xun Zhou; Dept. of Phys., Fudan Univ., Shanghai, China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-08-14
Аннотация:
The authors present a theoretical study of resonant tunnelling in the double-barrier structure under the application of a constant electric field, based upon an exact solution of the Schrodinger equation. By using the transfer matrix technique, the transmission coefficient of the structure is determined as a function of the applied voltage and the incident electron energy. The current-voltage characteristics in the case of bulk carriers tunnelling into a two-dimensional quantum well and, for the first time, in the case of two-dimensional electrons tunnelling into a one-dimensional quantum wire are also calculated. The influence of the symmetry of the structure is studied. It is concluded that a larger peak-to-valley ratio can be expected by mere modulation of the width of the barrier.
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