| Автор | H White |
| Автор | D S McLachlan |
| Дата выпуска | 1989-09-18 |
| dc.description | The electrical transport properties of polycrystalline bismuth films sputtered onto substrates held at different temperatures have been studied. All the films measured have negative temperature coefficients of resistance between 1.4 and 300 K and lie in the weak-anti-localisation regime below about 15 K. The temperature dependence of the elastic length for all the films (T<15 K) was extracted from magnetoresistance measurements and is dependent on the distribution of the crystalline orientations which is, in turn, dependent on the substrate temperature during sputtering. Films sputtered onto substrates held at temperatures above room temperature show the characteristic weak localisation and electron-electron interaction temperature dependence, while films sputtered onto substrates held below room temperature show a more complicated temperature dependence at low temperatures in zero field. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Morphology dependence of weak-anti-localisation parameters in bismuth films |
| Тип | paper |
| DOI | 10.1088/0953-8984/1/37/013 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | 6665 |
| Последняя страница | 6677 |
| Аффилиация | H White; Dept. of Phys., Univ. of the Witwatersrand, Johannesburg, South Africa |
| Аффилиация | D S McLachlan; Dept. of Phys., Univ. of the Witwatersrand, Johannesburg, South Africa |
| Выпуск | 37 |
