Quantised Hall effect and magnetoresistance through a quantum point contact
B R Snell; P H Beton; P C Main; A Neves; J R Owers-Bradley; L Eaves; M Henini; O H Hughes; S P Beaumont; C D W Wilkinson; B R Snell; Dept. of Phys., Nottingham Univ., UK; P H Beton; Dept. of Phys., Nottingham Univ., UK; P C Main; Dept. of Phys., Nottingham Univ., UK; A Neves; Dept. of Phys., Nottingham Univ., UK; J R Owers-Bradley; Dept. of Phys., Nottingham Univ., UK; L Eaves; Dept. of Phys., Nottingham Univ., UK; M Henini; Dept. of Phys., Nottingham Univ., UK; O H Hughes; Dept. of Phys., Nottingham Univ., UK; S P Beaumont; Dept. of Phys., Nottingham Univ., UK; C D W Wilkinson; Dept. of Phys., Nottingham Univ., UK
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-10-09
Аннотация:
The four-terminal magnetoresistance and quantised Hall effect through a quantum point contact are investigated in a two-dimensional electron gas (2DEG) based on an n-type (AlGa)As/GaAs single heterostructure. Depending on the choice of current and voltage contacts we measure three different magnetoresistances in a quantising magnetic field. The results agree with a simple model based on conduction via edge states and also with a more conventional analysis based on the properties of a bulk 2DEG.
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