Properties of electrons and excitons in graded quantum wells of Ga<sub>1-x</sub>Al<sub>x</sub>As in an electric field
Jia-Lin Zhu; Jia-Jing Xiong; Bing-Lin Gu; Jia-Lin Zhu; Centre of Theor. Phys., CCAST World Lab., Beijing, China; Jia-Jing Xiong; Centre of Theor. Phys., CCAST World Lab., Beijing, China; Bing-Lin Gu; Centre of Theor. Phys., CCAST World Lab., Beijing, China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-10-16
Аннотация:
Using the method of series expansion, subbands of electrons and holes, electron-hole overlap functions and binding energies of excitons are calculated for the graded quantum well of Ga<sub>1-x</sub>Al<sub>x</sub>As with a Ga<sub>0.66</sub>Al<sub>0.34</sub>As barrier in the electric field F between 0 and +or-9 (10<sup>4</sup> V cm<sup>-1</sup>). The width of the well is 200 AA, and the electric field is perpendicular to the material layers. The calculations reveal that the behaviour of electrons and excitons in this well is very different from that in square quantum wells and is useful for some device applications.
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