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Автор G Salomonsen
Автор N Norman
Автор O Lonsjo
Автор T G Finstad
Дата выпуска 1989-10-23
dc.description Oxidation kinetics of thin films of Cr in the temperature range 490-630 degrees C have been studied using backscattering spectrometry and X-ray diffraction. In the studied region the growth of the oxide Cr<sub>2</sub>O<sub>3</sub> has been found to obey a parabolic growth-rate law with an activation energy of 1.2 eV. Implanted Xe markers show that the growth of the oxide occurs almost entirely at the surface and is controlled by the motion of Cr species in the oxide.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Kinetics and mechanism of oxide formation on Cr thin films
Тип paper
DOI 10.1088/0953-8984/1/42/006
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 1
Первая страница 7843
Последняя страница 7850
Аффилиация G Salomonsen; Inst. of Phys., Oslo Univ., Norway
Аффилиация N Norman; Inst. of Phys., Oslo Univ., Norway
Аффилиация O Lonsjo; Inst. of Phys., Oslo Univ., Norway
Аффилиация T G Finstad; Inst. of Phys., Oslo Univ., Norway
Выпуск 42

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