| Автор | A G B M Sasse |
| Автор | H Wormeester |
| Автор | M A van der Hoef |
| Автор | A van Silfhout |
| Дата выпуска | 1989-12-18 |
| dc.description | The measurements were performed on the clean 2*1 reconstructed Si(100) surface and this surface exposed to molecular oxygen (O<sub>2</sub>) or nitric oxide (NO) at room temperature. The data were corrected for electron loss and spectrometer distortions using the authors' newly developed deconvolution method. This method which uses global approximation and spline functions can overcome several difficulties with respect to deconvolution and allows them to derive high-quality auger lineshapes from the SiL<sub>2.3</sub> VV Auger electron spectra. The authors experimentally obtained Auger lineshapes were compared with theoretical lineshapes utilising quantum chemical cluster calculations. They used this type of calculation for the interpretation of the Auger lineshape in the actual p-like and s-like partial local density of states for different types of silicon atom. The observed intensities of the major features are in reasonable agreement with the authors' calculations. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Calculated and measured Auger lineshapes in clean Si(100)2×1, SiO<sub>x</sub> and Si-NO |
| Тип | paper |
| DOI | 10.1088/0953-8984/1/50/018 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | 10175 |
| Последняя страница | 10186 |
| Аффилиация | A G B M Sasse; Dept. of Appl. Phys., Twente Univ., Enschede, Netherlands |
| Аффилиация | H Wormeester; Dept. of Appl. Phys., Twente Univ., Enschede, Netherlands |
| Аффилиация | M A van der Hoef; Dept. of Appl. Phys., Twente Univ., Enschede, Netherlands |
| Аффилиация | A van Silfhout; Dept. of Appl. Phys., Twente Univ., Enschede, Netherlands |
| Выпуск | 50 |
