Автор |
M J Smith |
Автор |
P N Butcher |
Дата выпуска |
1989-02-20 |
dc.description |
Phonon drag thermopower S<sub>g</sub> calculations are presented for a quasi-2D electron gas at the (100) plane in a Si MOSFET and compared with previous theory and experiment. Without screening -S<sub>g</sub> is improved to a factor of approximately 16 times larger than experiment (from approximately 35). Multi-sub-band screening is considered and its importance assessed in the experimental range (2-6 K and electron densities to 10<sup>16</sup> m<sup>-2</sup>) but a single sub-band approximation is found to be sufficient and gives thermopowers just approximately 40% different from experiment. Further improvement is made by adopting the Fang and Howard variational wavefunction and better material parameters. The best agreement is found to be about 5% at temperatures in the mid-range (4 K) and for the highest electron densities. The same excellent qualitative agreement with experiment is retained including the peak in -S<sub>g</sub>/T<sup>3</sup> whose presence is explained by enhanced phonon absorption around the Kohn resonance (q approximately=2k<sub>F</sub>). The peak positions move up in temperature (by about 0.75 K) because the dominant q-value increases and reduces the effect of screening on S<sub>g</sub> at higher T. In GaAs/GaAlAs heterojunctions S<sub>g</sub> is much less sensitive to screening effects because the screening constant is much smaller in GaAs than it is in Si. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
A calculation of the effect of screening on phonon drag thermopower in a Si MOSFET |
Тип |
paper |
DOI |
10.1088/0953-8984/1/7/010 |
Electronic ISSN |
1361-648X |
Print ISSN |
0953-8984 |
Журнал |
Journal of Physics: Condensed Matter |
Том |
1 |
Первая страница |
1261 |
Последняя страница |
1273 |
Аффилиация |
M J Smith; Dept. of Phys., Warwick Univ., Coventry, UK |
Аффилиация |
P N Butcher; Dept. of Phys., Warwick Univ., Coventry, UK |
Выпуск |
7 |