| Автор | J W Gardner |
| Автор | T T Tan |
| Дата выпуска | 1989-10-01 |
| dc.description | Barrier properties of a promising conjugated polymer, poly(N-methylpyrrole) (PMPY) with high- and low-work-function metals, gold and indium respectively, have been investigated. The electrical conductivity of PMPY films was varied from insulating to metallic levels by electrochemical oxidation I-V characteristics were used to investigate the function properties. Heavily doped PMPY<sup>+</sup> films were found to form an Ohmic contact with gold ( phi <sub>Au</sub>=5.1 eV) and a Schottky barrier with indium ( phi <sub>In</sub>=4.1 eV), this difference corresponding to the difference in work functions. Results indicate a leaky Schottky barrier with high fields producing InJ varies as V<sup>1/2</sup> and are interpreted in terms of metal-semiconductor band theory. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Properties of metal/poly(N-methylpyrrole) Schottky barriers |
| Тип | paper |
| DOI | 10.1088/0953-8984/1/SB/023 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | SB133 |
| Последняя страница | SB138 |
| Аффилиация | J W Gardner; Dept. of Eng., Warwick Univ., Coventry, UK |
| Аффилиация | T T Tan; Dept. of Eng., Warwick Univ., Coventry, UK |
| Выпуск | SB |
