| Автор | R G van Silfhout |
| Автор | J W M Frenken |
| Автор | J F van der Veen |
| Автор | S Ferrer |
| Автор | A Johnson |
| Автор | H Derbyshire |
| Автор | C Norris |
| Автор | J E Macdonald |
| Дата выпуска | 1989-10-01 |
| dc.description | The growth of Ge on Ge(111) has been studied in situ by X-ray diffraction and reflectivity. For well defined geometries the scattered X-ray intensity is extremely sensitive to atomic-scale surface morphology. For substrate temperatures up to 200 degrees C oscillations in the reflected and diffracted yields are observed, which are indicative for two-dimensional nucleation. Curves showing reflectivity versus perpendicular momentum transfer Q<sub>z</sub> yield the height distribution of the islands. The use of X-rays allows for a straightforward 'single-scattering' interpretation of the intensities, as opposed to the use of reflection high-energy electron diffraction where multiple-scattering effects have to be taken into account. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | X-ray intensity oscillations occurring during growth of Ge on Ge(111)-a comparison with RHEED |
| Тип | paper |
| DOI | 10.1088/0953-8984/1/SB/047 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | SB213 |
| Последняя страница | SB214 |
| Аффилиация | R G van Silfhout; FOM Inst. for Atomic & Molecular Phys., Amsterdam, Netherlands |
| Аффилиация | J W M Frenken; FOM Inst. for Atomic & Molecular Phys., Amsterdam, Netherlands |
| Аффилиация | J F van der Veen; FOM Inst. for Atomic & Molecular Phys., Amsterdam, Netherlands |
| Аффилиация | S Ferrer; FOM Inst. for Atomic & Molecular Phys., Amsterdam, Netherlands |
| Аффилиация | A Johnson; FOM Inst. for Atomic & Molecular Phys., Amsterdam, Netherlands |
| Аффилиация | H Derbyshire; FOM Inst. for Atomic & Molecular Phys., Amsterdam, Netherlands |
| Аффилиация | C Norris; FOM Inst. for Atomic & Molecular Phys., Amsterdam, Netherlands |
| Аффилиация | J E Macdonald; FOM Inst. for Atomic & Molecular Phys., Amsterdam, Netherlands |
| Выпуск | SB |
