The temperature dependence of Ag/InP(110) interface formation
C Stephens; R Cimino; K Fives; S Adamson; J Thornton; W Braun; I T McGovern; C Stephens; Phys. Inst., Frankfurt am Main Univ., West Germany; R Cimino; Phys. Inst., Frankfurt am Main Univ., West Germany; K Fives; Phys. Inst., Frankfurt am Main Univ., West Germany; S Adamson; Phys. Inst., Frankfurt am Main Univ., West Germany; J Thornton; Phys. Inst., Frankfurt am Main Univ., West Germany; W Braun; Phys. Inst., Frankfurt am Main Univ., West Germany; I T McGovern; Phys. Inst., Frankfurt am Main Univ., West Germany
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-10-01
Аннотация:
The stepwise formation of the Ag/n-InP(110) interface has been investigated at room and low (<120K) temperature using synchrotron radiation soft XPS in the coverage range 0.005-5 ML. Chemical, morphological and band bending effects were monitored and a comparison with the Ag/GaAs(110) interface is made.
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