| Автор | Bal K Agrawal |
| Автор | Pankaj Srivastava |
| Автор | Savitri Agrawal |
| Дата выпуска | 1998-01-12 |
| dc.description | We present electronic surface states as obtained by a comprehensive and systematic study of a monolayer of Sb on a relaxed GaAs(110) zinc-blende surface using the first-principles full-potential self-consistent linear muffin tin orbital (LMTO) method. By considering the well accepted epitaxial continued layer structure (ECLS) model we investigate the surface states in the fundamental band gap along high-symmetry directions of the surface Brillouin zone. For the ordered overlayer Sb/GaAs(110), intrinsic surface states appear in the energy gap region which shift towards the bulk valence and the conduction band region when the relaxations of the surface atoms are considered. A detailed analysis of the surface and resonance states reveals that they are in excellent agreement with the available experimental data and the existing pseudopotential calculations. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Ab initio LMTO calculation of the electronic structure of an ordered monolayer of Sb on a relaxed GaAs(110) surface |
| Тип | paper |
| DOI | 10.1088/0953-8984/10/1/008 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 10 |
| Первая страница | 67 |
| Последняя страница | 78 |
| Аффилиация | Bal K Agrawal; Department of Physics, University of Allahabad, Allahabad 211 002, India |
| Аффилиация | Pankaj Srivastava; Department of Physics, University of Allahabad, Allahabad 211 002, India |
| Аффилиация | Savitri Agrawal; Department of Physics, University of Allahabad, Allahabad 211 002, India |
| Выпуск | 1 |
