Schottky barrier capacitance and DLTS techniques have been employed to study the shallow- and deep-state distributions in bulk-grown CdTe crystals following an annealing treatment designed to convert the samples from semi-insulating to n-type conductivity. Although the annealing conditions (saturated Cd vapour at ) were chosen to ensure that homogeneity was achieved at the annealing temperature, substantial non-uniformities were observed in the test samples at room temperature. Although n-type conductivity was successfully achieved, this was restricted to a near-surface channel with a width of for undoped samples and for In-doped samples. These results can be attributed to diffusion and self-compensation processes occurring during cool-down following the anneal, but the DLTS measurements yield no evidence for the generation of new levels arising from these processes. The existing states (with energy levels in the detectable range from to below the conduction band) are found to be non-uniformly distributed as a function of depth below the surface, the form of the actual depth profiles being very similar to the corresponding free carrier concentration profile.