Автор |
H L Bai |
Автор |
E Y Jiang |
Дата выпуска |
1998-04-20 |
dc.description |
The Raman features of CN layers in annealed CoN/CN soft-x-ray multilayers, deposited by dual-facing-target sputtering, are investigated. The Raman spectra resemble that of amorphous carbon. The features that are different from those of Co/C multilayers (Bai H L, Jiang E Y and Wang C D 1996 J. Appl. Phys. 80 1428) include: (1) the integral intensity ratio I(D)/I(G) of the D line to the G line increases with the annealing temperature, but the peak feature observed at in the I(D)/I(G) versus temperature curve of the Co/C multilayers no longer exists; (2) in the temperature range of the annealing, the D-line position changes from 1352.1 to , and the G-line position from 1553.7 to ; the D- and G-line positions for as-deposited M4-CoN/CN multilayers are much higher than those of Co/C multilayers, and close to those for polycrystalline graphite; (3) the linewidths of the D and G lines decrease with the increasing annealing temperature, and they are much lower than those for Co/C multilayers. These results indicate that the primary bonding in the CN sublayers is . In other words, the formation of the bonding in the CN sublayers can be suppressed effectively by doping with N atoms, and thus the period expansion resulting from the changes in the density of the CN layers can be decreased considerably. With the low-angle x-ray diffraction measurements, we do observe a great decrease in period expansion. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Raman scattering investigation of CN in annealed CoN/CN soft-x-ray multilayers |
Тип |
paper |
DOI |
10.1088/0953-8984/10/15/019 |
Electronic ISSN |
1361-648X |
Print ISSN |
0953-8984 |
Журнал |
Journal of Physics: Condensed Matter |
Том |
10 |
Первая страница |
3433 |
Последняя страница |
3448 |
Аффилиация |
H L Bai; Department of Applied Physics, Tianjin University, Tianjin 300072, People's Republic of China |
Аффилиация |
E Y Jiang; Department of Applied Physics, Tianjin University, Tianjin 300072, People's Republic of China |
Выпуск |
15 |