New compounds with MgAgAs-type structure: NbIrSn and NbIrSb
Heinrich Hohl; Art P Ramirez; Claudia Goldmann; Gabriele Ernst; Bernd Wölfing; Ernst Bucher; Heinrich Hohl; Lucent Technologies, Bell Laboratories, 700 Mountain Avenue, Murray Hill, NJ 07974-0636, USA; Art P Ramirez; Lucent Technologies, Bell Laboratories, 700 Mountain Avenue, Murray Hill, NJ 07974-0636, USA; Claudia Goldmann; Lucent Technologies, Bell Laboratories, 700 Mountain Avenue, Murray Hill, NJ 07974-0636, USA; Gabriele Ernst; Lucent Technologies, Bell Laboratories, 700 Mountain Avenue, Murray Hill, NJ 07974-0636, USA; Bernd Wölfing; Lucent Technologies, Bell Laboratories, 700 Mountain Avenue, Murray Hill, NJ 07974-0636, USA; Ernst Bucher; Lucent Technologies, Bell Laboratories, 700 Mountain Avenue, Murray Hill, NJ 07974-0636, USA
Журнал:
Journal of Physics: Condensed Matter
Дата:
1998-09-07
Аннотация:
NbIrSn and NbIrSb crystallize in a cubic MgAgAs-type structure with lattice parameters of 617.76(2) and 614.97(2) pm, respectively. Both compounds exhibit incongruent melting behaviour. NbIrSn is a p-type semiconductor with an energy gap of 0.28 eV. At room temperature, it has a Seebeck coefficient of and a resistivity of . NbIrSb is metallic with and at room temperature. The formation of the solid solutions has been confirmed.
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