| Автор | V V Afonin |
| Автор | V L Gurevich |
| Автор | R Laiho |
| Автор | A Pavlov |
| Автор | Y Pavlova |
| Дата выпуска | 1998-10-05 |
| dc.description | A new phenomenon of periodic oscillations is observed in I-V characteristics of porous silicon under illumination by visible light. The measurements are performed at room temperature using a scanning tunnelling microscope. The heights of the oscillation peaks appear to be a linear function of the oscillation number. The experimental value of the Coulomb energy determined from the oscillation period is much smaller than . The oscillations are attributed to a Coulomb effect, i.e. to the periodic trapping of a multi-electron level in a quantum well within a Si nanocrystal under the combined influence of the Coulomb interaction among the carriers and the variation of the potential difference between the STM tip and the semiconductor surface. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A novel room temperature oscillatory phenomenon in photoinduced scanning tunnelling microscope spectra of porous Si |
| Тип | paper |
| DOI | 10.1088/0953-8984/10/39/008 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 10 |
| Первая страница | 8687 |
| Последняя страница | 8702 |
| Выпуск | 39 |
