| Автор | S W da Silva |
| Автор | J C Galzerani |
| Автор | D I Lubyshev |
| Автор | P Basmaji |
| Дата выпуска | 1998-11-02 |
| dc.description | GaAs epitaxially grown on porous Si (PS) showed the presence of wires with typical diameters of 60 nm, and lengths in the range 6-10 . The Raman spectra of these samples were studied, and we focused attention on two additional modes appearing as `shoulders' to the LO and TO GaAs lines. The former could be assigned to a surface phonon, and the latter to the presence of As clusters. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Surface phonon observed in GaAs wire crystals grown on porous Si |
| Тип | paper |
| DOI | 10.1088/0953-8984/10/43/011 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 10 |
| Первая страница | 9687 |
| Последняя страница | 9690 |
| Выпуск | 43 |
