| Автор | E L Nagaev |
| Автор | A I Podel'shchikov |
| Автор | V E Zil'berwarg |
| Дата выпуска | 1998-11-02 |
| dc.description | The electronic phase separation in doped antiferromagnetic semiconductors and materials exhibiting colossal magnetoresistance, with the charge-carrier density n close to the density at which the entire crystal becomes ferromagnetic, is investigated theoretically. The case of wide s bands and that of double exchange are investigated. At a first-order phase transition from the phase-separated state to the ferromagnetic state should take place on increase of the temperature. At a re-entrant phase separation is possible when, with increasing temperature, first, the first-order phase transition from the ferromagnetic state to the phase-separated state takes place and, then, the latter melts. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Re-entrant electronic phase separation in magnetic semiconductors and materials exhibiting colossal magnetoresistance |
| Тип | paper |
| DOI | 10.1088/0953-8984/10/43/026 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 10 |
| Первая страница | 9823 |
| Последняя страница | 9832 |
| Аффилиация | E L Nagaev; Institute for High-Pressure Physics, Troitsk, Moscow Region, 142092, Russia |
| Аффилиация | A I Podel'shchikov; Institute for High-Pressure Physics, Troitsk, Moscow Region, 142092, Russia |
| Аффилиация | V E Zil'berwarg; Institute for High-Pressure Physics, Troitsk, Moscow Region, 142092, Russia |
| Выпуск | 43 |
