| Автор | H Eduardo Roman |
| Автор | Lorenzo Pavesi |
| Дата выпуска | 1998-02-16 |
| dc.description | The role of diffusion of charge carriers in radiative recombination processes for porous silicon is discussed. The conducting porous material is modelled on a lattice in which each occupied site represents an Si crystal of nanometre size. To describe the recombination dynamics of particles and holes, two extreme situations are considered: one in which the electron and the hole diffuse as a single entity (exciton-like motion) and a second one in which they diffuse independently of each other (two-species motion). In both cases the recombination is excitonic and takes place on a single site. The present results are compared with other theoretical approaches, originally developed for describing photoluminescence in hydrogenated amorphous silicon (a-Si:H). |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Reply to the comment on `Monte Carlo simulations of the recombination dynamics in porous silicon' |
| Тип | note |
| DOI | 10.1088/0953-8984/10/6/028 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 10 |
| Первая страница | 1449 |
| Последняя страница | 1451 |
| Выпуск | 6 |
