| Автор | V I Arkhipov |
| Автор | E V Emelianova |
| Автор | G J Adriaenssens |
| Дата выпуска | 1999-03-29 |
| dc.description | An analytic model of charge-carrier kinetics in a disordered hopping system accounting for the possibility of jumps to non-nearest hopping neighbours is formulated. The model is applied to the analysis of charge-carrier energy relaxation at both low and finite temperatures. Carrier jumps to distant hopping neighbours are shown to increase the depth of the carrier energy distribution at both low and finite temperatures, and to cause a shift of the effective transport level to deeper states at finite temperatures. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The effect of jumps into distant sites on carrier energy relaxation in a disordered hopping system |
| Тип | paper |
| DOI | 10.1088/0953-8984/11/12/008 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 11 |
| Первая страница | 2531 |
| Последняя страница | 2538 |
| Аффилиация | V I Arkhipov; Laboratorium voor Halfgeleiderfysica, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Heverlee-Leuven, Belgium |
| Аффилиация | E V Emelianova; Laboratorium voor Halfgeleiderfysica, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Heverlee-Leuven, Belgium |
| Аффилиация | G J Adriaenssens; Laboratorium voor Halfgeleiderfysica, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001 Heverlee-Leuven, Belgium |
| Выпуск | 12 |
