Paramagnetic centres induced in Ge-doped glass with UV irradiation
Makoto Fujimaki; Tetsuya Katoh; Toshiaki Kasahara; Nahoko Miyazaki; Yoshimichi Ohki; Makoto Fujimaki; Department of Electrical, Electronics and Computer Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan; Tetsuya Katoh; Department of Electrical, Electronics and Computer Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan; Toshiaki Kasahara; Department of Electrical, Electronics and Computer Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan; Nahoko Miyazaki; Department of Electrical, Electronics and Computer Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan; Yoshimichi Ohki; Department of Electrical, Electronics and Computer Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
Журнал:
Journal of Physics: Condensed Matter
Дата:
1999-03-29
Аннотация:
Changes in concentrations of the photo-induced paramagnetic centres, Ge centre, Ge electron centre (GEC) and positively charged Ge lone-pair centre in four Ge-doped glasses with Ge contents of 1.0, 1.4, 6.9 and 9.2 mol% were investigated, using a KrCl excimer lamp (5.6 eV, 7.0 mW ) and a KrF excimer laser (5.0 eV, 4 MW ) as photon sources. When the glasses were irradiated with photons from the lamp, the Ge centre and the GEC were induced in all the glasses. However, the was observed only in the sample with Ge content of 1.4 mol% where the concentration of the induced Ge centre was smaller than that of the induced GEC. The irradiation of photons from the laser induced the GEC and in all the glasses. When the photon irradiation from the laser was continued onto the glasses, the Ge centres were induced and the concentration of the wasf found to decrease with an increase in the concentration of the Ge centres. From these phenomena, it was concluded that the generation of the Ge centres diminishes the concentration of the .
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