| Автор | N P Kovalenko |
| Автор | I K Doycho |
| Автор | S A Gevelyuk |
| Автор | V A Vorobyeva |
| Автор | Ya O Roizin |
| Дата выпуска | 1999-06-21 |
| dc.description | We have performed time-resolved measurements of porous silicon (PS) photoluminescence (PL) at temperatures in the range from 15 K to 300 K for different emission energies. For the first time we have observed lifetimes of radiative recombination ranging from nanoseconds to seconds. Strong phosphorescence was revealed for as-prepared samples at 15 K and also for partly oxidized specimens at room temperature. The PS luminescence had a polarized component that was strongly dependent upon the detection energy and the prehistory of the specimens studied. We analyse two possible scenarios of radiative recombination in PS: (1) migration of non-equilibrium charge carriers between nanometre-sized silicon clusters prior to recombination; (2) geminate recombination of charge carriers thermalized in the same or neighbouring silicon domains. Combination of these scenarios allows us to explain the PL of PS on all timescales from one viewpoint. We present direct Monte Carlo simulations of recombination processes in PS, and show that the results are in good agreement with experimental data. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Geminate and distant-pair radiative recombination in porous silicon |
| Тип | paper |
| DOI | 10.1088/0953-8984/11/24/318 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 11 |
| Первая страница | 4783 |
| Последняя страница | 4800 |
| Выпуск | 24 |
