| Автор | E C Ferreira |
| Автор | J A P da Costa |
| Автор | J A K Freire |
| Автор | G A Farias |
| Автор | V N Freire |
| Дата выпуска | 1999-07-26 |
| dc.description | Stark shifts are calculated for the ground and first excited electron energy levels in single GaAs/Al<sub>0.35</sub>Ga<sub>0.65</sub>As quantum wells with non-abrupt interfaces, which is a more appropriate picture for actual samples. The quantum-confined Stark shift for the ground-state electron energy level decreases as the non-abrupt interfaces become larger, but it is always negative. In striking contrast with this behaviour, the existence of non-abrupt interfaces can change the sign of the quantum-confined Stark shift for the first excited energy level in comparison to that calculated considering abrupt interfaces. These effects are shown to be stronger in the case of symmetric rather than asymmetric non-abrupt interfaces. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Sign inversion of the Stark shift in single non-abrupt GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As quantum wells |
| Тип | paper |
| DOI | 10.1088/0953-8984/11/29/306 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 11 |
| Первая страница | 5593 |
| Последняя страница | 5602 |
| Выпуск | 29 |
