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Автор G V Benemanskaya
Автор D V Daineka
Автор G E Frank-Kamenetskaya
Дата выпуска 1999-09-06
dc.description Adsorption of K on the Si(111)7 × 7 surface has been investigated in the submonolayer coverage range at room temperature. The method of threshold photoemission spectroscopy using s- and p-polarized light excitation was employed for studying the evolution of surface electronic structure near the Fermi level, the work function and the ionization energy. A qualitative change in character of band structure has been observed, depending on K coverage. Suppression of metallicity of the Si(111)7 × 7 surface was found at the initial stage of K adsorption. One surface band A<sub>1</sub> below the VBM was revealed at low coverage. Increasing K coverage has led to both the appearance of the K-induced band A<sub>2</sub> and significant movement of the band towards the Fermi level. The K/Si(111)7 × 7 interface was found to be semiconducting-like up to saturation coverage. Near saturation, the Fermi level is seen to cross the K-induced band A<sub>2</sub>. Such surface band structure is identified as being metallic-like. Results indicate metallization via adlayer accompanied by Fermi level pinning.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Development of electronic band structure of the K-adsorbed Si(111)7 × 7 surface
Тип paper
DOI 10.1088/0953-8984/11/35/306
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 11
Первая страница 6679
Последняя страница 6684
Аффилиация G V Benemanskaya; A F Ioffe Physicotechnical Institute of the Russian Academy of Sciences, St Petersburg, 194021, Russia
Аффилиация D V Daineka; A F Ioffe Physicotechnical Institute of the Russian Academy of Sciences, St Petersburg, 194021, Russia
Аффилиация G E Frank-Kamenetskaya; A F Ioffe Physicotechnical Institute of the Russian Academy of Sciences, St Petersburg, 194021, Russia
Выпуск 35

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