Автор |
G V Benemanskaya |
Автор |
D V Daineka |
Автор |
G E Frank-Kamenetskaya |
Дата выпуска |
1999-09-06 |
dc.description |
Adsorption of K on the Si(111)7 × 7 surface has been investigated in the submonolayer coverage range at room temperature. The method of threshold photoemission spectroscopy using s- and p-polarized light excitation was employed for studying the evolution of surface electronic structure near the Fermi level, the work function and the ionization energy. A qualitative change in character of band structure has been observed, depending on K coverage. Suppression of metallicity of the Si(111)7 × 7 surface was found at the initial stage of K adsorption. One surface band A<sub>1</sub> below the VBM was revealed at low coverage. Increasing K coverage has led to both the appearance of the K-induced band A<sub>2</sub> and significant movement of the band towards the Fermi level. The K/Si(111)7 × 7 interface was found to be semiconducting-like up to saturation coverage. Near saturation, the Fermi level is seen to cross the K-induced band A<sub>2</sub>. Such surface band structure is identified as being metallic-like. Results indicate metallization via adlayer accompanied by Fermi level pinning. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Development of electronic band structure of the K-adsorbed Si(111)7 × 7 surface |
Тип |
paper |
DOI |
10.1088/0953-8984/11/35/306 |
Electronic ISSN |
1361-648X |
Print ISSN |
0953-8984 |
Журнал |
Journal of Physics: Condensed Matter |
Том |
11 |
Первая страница |
6679 |
Последняя страница |
6684 |
Аффилиация |
G V Benemanskaya; A F Ioffe Physicotechnical Institute of the Russian Academy of Sciences, St Petersburg, 194021, Russia |
Аффилиация |
D V Daineka; A F Ioffe Physicotechnical Institute of the Russian Academy of Sciences, St Petersburg, 194021, Russia |
Аффилиация |
G E Frank-Kamenetskaya; A F Ioffe Physicotechnical Institute of the Russian Academy of Sciences, St Petersburg, 194021, Russia |
Выпуск |
35 |