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Автор Ingrid Petri
Автор Philip S Salmon
Автор Henry E Fischer
Дата выпуска 1999-09-20
dc.description The partial structure factors and pair distribution functions for liquid GeSe at 727(2) °C were measured by using the method of isotopic substitution in neutron diffraction. The results show that the liquid retains little memory of the high-temperature crystalline phase of GeSe. On melting, there is a reduction in the Ge-Se coordination number from 6 to 3.2(2) and both Ge-Ge and Se-Se homopolar bonds become features of the molten state with contact distances of 2.36(2) and 2.34(2) Å and coordination numbers of 0.8(1) and 0.22(3) respectively. The results are discussed by reference to the structures of molten CuSe and CuBr, which contain electronegative species of the same or similar size. The structure is also compared with that of the glass-forming network melt GeSe<sub>2</sub> and it is found that, unlike the latter, there is no strong indication of intermediate-range atomic ordering as manifest by a prominent first sharp diffraction peak in one of the measured partial structure factors.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Structure of the liquid semiconductor GeSe
Тип paper
DOI 10.1088/0953-8984/11/37/302
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 11
Первая страница 7051
Последняя страница 7060
Выпуск 37

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