| Автор | Wen-Sheng Liu |
| Автор | Shi-Jie Xiong |
| Дата выпуска | 1999-02-15 |
| dc.description | The localization behaviour of the anisotropic extended double-exchange model with both diagonal and spin-orientation-dependent off-diagonal disorder is investigated using the transfer-matrix method. The anisotropy is described by different in-plane and inter-plane hopping integrals. By using a mean-field distribution of the spin orientation, the localization length of electrons is calculated as a function of temperature. It is found that the metal-insulator transition temperature t<sub>MIT</sub> of the system increases with decreasing degree of anisotropy γ. On the insulating side, the localization length for t close to t<sub>MIT</sub> varies as . We also calculate the value of ν for various γ-values. The comparison of the results obtained and the experimental measurements for the layered mixed-valence Mn oxides is discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Metal-insulator transition in anisotropic systems with both diagonal and spin-orientation-dependent off-diagonal disorder |
| Тип | paper |
| DOI | 10.1088/0953-8984/11/6/014 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 11 |
| Первая страница | 1503 |
| Последняя страница | 1510 |
| Аффилиация | Wen-Sheng Liu; Department of Physics and Solid Microstructure Laboratory, Nanjing University, Nanjing 210093, People's Republic of China |
| Аффилиация | Shi-Jie Xiong; Department of Physics and Solid Microstructure Laboratory, Nanjing University, Nanjing 210093, People's Republic of China |
| Выпуск | 6 |
