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Автор Osvaldo F Schilling
Автор Luis Ghivelder
Дата выпуска 2000-03-27
dc.description H-Nb<sub>2</sub> O<sub>5</sub> (Nb<sub>28</sub> O<sub>70</sub> ) is a semiconductor whose structure is built of NbO<sub>6</sub> octahedra, which share corners and edges to form blocks parallel to the basal ac plane of the structure. One unit cell contains two blocks of 3 × 4 and 3 × 5 octahedra displaced by 1/2 b -axis spacing, besides one further Nb atom located in tetrahedrally coordinated sites along channels parallel to the b axis. Such channels contain octahedral interstices which are the preferential sites for point defect segregation in this structure. The possibility of using the channels as a framework for obtaining oriented spin arrays has never been explored in the literature. To investigate which kind of magnetic interaction would arise we manufactured a sample of H-Nb<sub>2</sub> O<sub>5</sub> containing enough Fe to fill part of the octahedral interstices in the channels and measured the ac susceptibility response. The results were consistent with the formation of linear chains of spins, with variable coupling constants along the chains. The variable coupling can be understood as a consequence of the influence of the large number of possible arrangements of Nb and Fe atoms along the channels upon the sign and magnitude of superexchange interactions mediated by the oxygen atoms.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Magnetic properties of iron-doped channels in H-Nb<sub>2</sub>O<sub>5</sub>
Тип paper
DOI 10.1088/0953-8984/12/12/321
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 12
Первая страница 2825
Последняя страница 2832
Выпуск 12

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