| Автор | M V Strikha |
| Автор | F T Vasko |
| Дата выпуска | 2000-05-01 |
| dc.description | Semiconductor alloy with spatially non-uniform change of composition close to the averaged value, corresponding to the transition between gapless and narrow-gap states, is studied. The density of states is calculated within the two-band model of band structure with random change of the position of the conduction band bottom and with a uniform valence band top. The appearance of an inhomogeneity-induced gap in the energy dependence of the density of states is discussed for the cases of short-range and long-range non-uniformities of composition. The peculiarities of the kinetic effects due to modification of the gapless state in such non-uniform semiconductors are discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Modification of the gapless state in non-uniform semiconductor alloys |
| Тип | paper |
| DOI | 10.1088/0953-8984/12/17/317 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 12 |
| Первая страница | 4141 |
| Последняя страница | 4149 |
| Аффилиация | M V Strikha; Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, 252650, Ukraine |
| Аффилиация | F T Vasko; Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, 252650, Ukraine |
| Выпуск | 17 |
