Автор |
A Matos-Abiague |
Автор |
L E Oliveira |
Автор |
M de Dios-Leyva |
Дата выпуска |
2000-07-03 |
dc.description |
We have extended the fractional-dimensional space approach to study exciton states and diamagnetic shifts in symmetric coupled double GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells. In this scheme, the fractional dimension is chosen using an analytical procedure, and the real anisotropic `exciton + double quantum well' semiconductor system is mapped, for each exciton state, into an effective fractional-dimensional isotropic environment. We have performed calculations within the fractional-dimensional space scheme for the binding energies of 1s-like heavy-hole direct excitons and for the energy difference between 1s- and 2s-like direct heavy-hole exciton states in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As symmetric coupled double quantum wells. Also, theoretical results were obtained for the magnetic-field dependence of the 1s-like heavy-hole exciton energy shift and for the exciton diamagnetic coefficient in quantum wells and symmetric coupled double quantum wells. Fractional-dimensional theoretical results are shown to be in good agreement with available experimental measurements and previous theoretical calculations. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Exciton states and diamagnetic shifts in symmetric coupled double GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells within the fractional-dimensional approach |
Тип |
paper |
DOI |
10.1088/0953-8984/12/26/315 |
Electronic ISSN |
1361-648X |
Print ISSN |
0953-8984 |
Журнал |
Journal of Physics: Condensed Matter |
Том |
12 |
Первая страница |
5691 |
Последняя страница |
5700 |
Выпуск |
26 |