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Автор A Matos-Abiague
Автор L E Oliveira
Автор M de Dios-Leyva
Дата выпуска 2000-07-03
dc.description We have extended the fractional-dimensional space approach to study exciton states and diamagnetic shifts in symmetric coupled double GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells. In this scheme, the fractional dimension is chosen using an analytical procedure, and the real anisotropic `exciton + double quantum well' semiconductor system is mapped, for each exciton state, into an effective fractional-dimensional isotropic environment. We have performed calculations within the fractional-dimensional space scheme for the binding energies of 1s-like heavy-hole direct excitons and for the energy difference between 1s- and 2s-like direct heavy-hole exciton states in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As symmetric coupled double quantum wells. Also, theoretical results were obtained for the magnetic-field dependence of the 1s-like heavy-hole exciton energy shift and for the exciton diamagnetic coefficient in quantum wells and symmetric coupled double quantum wells. Fractional-dimensional theoretical results are shown to be in good agreement with available experimental measurements and previous theoretical calculations.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Exciton states and diamagnetic shifts in symmetric coupled double GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells within the fractional-dimensional approach
Тип paper
DOI 10.1088/0953-8984/12/26/315
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 12
Первая страница 5691
Последняя страница 5700
Выпуск 26

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