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Автор R W Peng
Автор G J Jin
Автор Mu Wang
Автор A Hu
Автор S S Jiang
Автор D Feng
Дата выпуска 2000-07-03
dc.description We present a study of electronic behaviours in the k-component Fibonacci (KCF) quantum waveguides, in which k different incommensurate intervals are arranged according to a substitution rule. On the basis of the transfer matrix method, the quantum transmission properties of the KCF stub structures are obtained. It is shown that the transmission coefficient depends on the wavevector of the electron and the number of different incommensurate intervals k. For the KCF waveguides with the same k, on increasing the number of stubs, the minima in transmission extend gradually into the band gap over which the transmission is blocked. Meanwhile more transmission peaks appear. For finite KCF stub structures, on increasing the number of different incommensurate intervals k, the total transmission over the spectral region of interest decreases gradually and the width of the electronic band gap is enlarged. Moreover, when the value of k is large enough, the transmission is basically shut off, except at a few energies where resonant tunnelling takes place. These properties make it possible to use this kind of KCF waveguide as a switching device for digital applications. On the other hand, the charge-density distributions in these structures are singularly continuous. We propose that they can be analysed using a multifractal concept. A dimensional spectrum of singularities associated with the charge density, f (α), demonstrates that the electronic transport in the KCF waveguide presents scaling properties; hence the charge-density distribution shows a genuine multifractality.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Electronic transport in k-component Fibonacci quantum waveguides
Тип paper
DOI 10.1088/0953-8984/12/26/316
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 12
Первая страница 5701
Последняя страница 5712
Аффилиация R W Peng; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China and Centre for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, China
Аффилиация G J Jin; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China and Centre for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, China
Аффилиация Mu Wang; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China and Centre for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, China
Аффилиация A Hu; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China and Centre for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, China
Аффилиация S S Jiang; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China and Centre for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, China
Аффилиация D Feng; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China and Centre for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, China
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