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Автор B T Williams
Автор S J Gurman
Автор S H Baker
Автор E A Davis
Дата выпуска 2000-07-10
dc.description Structural and optical measurements have been made on a series of amorphous thin films of Si<sub>1-x</sub>Ni<sub>x</sub> with 0<x<0.75, prepared by RF sputtering. We present the results of structural studies using extended x-ray absorption fine structure (EXAFS) and small angle x-ray scattering (SAXS) together with optical measurements of the band gap. The EXAFS analysis gave interatomic distances, partial coordination numbers and Debye-Waller factors for the nearest neighbours of the two atom types. The Ni environment was found to be independent of composition for x<0.5. A small variation in the mean Si-Si distance was also found in this composition range. The SAXS results show phase segregation, on the 30 Å scale, for this composition range. We interpret the structural data in terms of a two-phase model, amorphous Si plus amorphous NiSi, for x<0.5 and a single-phase model for x>0.5. The optical data show that a metal-insulator transition occurs at about 10-15% Ni content. We suggest that this transition should be interpreted in terms of a percolation theory involving regions of conducting amorphous NiSi in an amorphous Si matrix.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Structure and properties of amorphous silicon-metal alloys: I. The Si<sub>1-x</sub>Ni<sub>x</sub> system
Тип paper
DOI 10.1088/0953-8984/12/27/315
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 12
Первая страница 5971
Последняя страница 5980
Аффилиация B T Williams; Department of Physics and Astronomy, University of Leicester, Leicester LE1 7RH, UK
Аффилиация S J Gurman; Department of Physics and Astronomy, University of Leicester, Leicester LE1 7RH, UK
Аффилиация S H Baker; Department of Physics and Astronomy, University of Leicester, Leicester LE1 7RH, UK
Аффилиация E A Davis; Department of Physics and Astronomy, University of Leicester, Leicester LE1 7RH, UK
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